AOL1448 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOL1448
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOL1448 uses advanced trench technology to
provide excellent R_DS(ON) with low gate charge.
This device is suitable for high side switch in SMPS and
general purpose applications.
V_DS (V) =30V
I_D = 36A
R_DS(ON) < 9.5mΩ
R_DS(ON) < 14mΩ
(V_GS = 10V)
(V_GS = 10V)
(V_GS = 4.5V)
- RoHS Compliant
- Halogen Free
100% UIS Tested!
100% R _g Tested!
UltraSO-8^TM Top View
D
S
G
D
Bottom tab
connected to
drain
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
30
±20
36
28
90
11
9
20
20
30
15
2
1.3
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
Symbol
Typ
t ≤ 10s
Steady-State
R_θJA
20
48
Steady-State
R_θJC
3.5
Max
25
60
5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com