AOL1444_08 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOL1444
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1444 uses advanced trench technology to
provide excellent R_DS(ON), shoot-through immunity and
body diode characteristics. This device is ideally
suited for use as a low side switch in CPU core power
conversion.
-RoHS Compliant
-Halogen and Antimony Free Green Device*
Features
V_DS (V) = 30V
I_D = 85A (V_GS = 10V)
R_DS(ON) < 4.3mΩ (V_GS = 10V)
R_DS(ON) < 6.3mΩ (V_GS = 4.5V)
UIS Tested
Rg,Ciss,Coss,Crss Tested
Ultra SO-8^TM Top View
D
S
G
D
Bottom tab
connected to
drain
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C ^G
Current ^B,G
T_C=100°C ^B
I_D
Pulsed Drain Current
I_DM
Continuous Drain
T_A=25°C
Current ^G
T_A=70°C
I_DSM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
Symbol
R_θJA
Maximum Junction-to-Case ^C
Steady-State
R_θJC
G
Maximum
30
±20
85
73
200
17
14
30
45
100
50
2.1
1.3
-55 to 175
Typ
19.6
48
1
S
Max
25
60
1.5
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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