AOL1444 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOL1444
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1444 uses advanced trench technology to
provide excellent R_DS(ON), shoot-through immunity
and body diode characteristics. This device is ideally
suited for use as a low side switch in CPU core
power conversion. Standard Product AOL1444 is
Pb-free (meets ROHS & Sony 259 specifications).
AOL1444L is a Green Product ordering option.
AOL1444 and AOL1444L are electrically identical.
Features
V_DS (V) = 30V
I_D = 85A (V_GS = 10V)
R_DS(ON) < 4.3mΩ (V_GS = 10V)
R_DS(ON) < 6.3mΩ (V_GS = 4.5V)
Ultra SO-8^TM Top View
Fits SOIC8
footprint !
D
Bottom tab
connected to
S
G
drain
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±20
Continuous Drain T_C=25°C ^G
85
Current ^B,G
T_C=100°C ^B
I_D
73
Pulsed Drain Current
I_DM
200
Continuous Drain T_A=25°C
17
Current ^G
T_A=70°C
I_DSM
13
Avalanche Current ^C
I_AR
30
Repetitive avalanche energy L=0.1mH^C E_AR
45
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
100
50
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
2.1
1.3
Junction and Storage Temperature Range T_J, T_STG
Thermal Characteristics
-55 to 175
Parameter
Symbol
Typ
Maximum Junction-to-Ambient^A
Maximum Junction-to-Ambient^A
t ≤ 10s
Steady-State
R_θJA
19.6
48
Maximum Junction-to-Case^C
Steady-State
R_θJC
1
Max
25
60
1.5
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W