AOL1440 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOL1440
N-Channel Enhancement Mode Field Effect Transistor
General Description
FFeeaattuurreess
The AOL1440 uses advanced trench technology to
provide excellent R_DS(ON), shoot-through immunity
and body diode characteristics. This device is ideally
suited for use as a low side switch in CPU core
power conversion. Standard Product AOL1440 is
Pb-free (meets ROHS & Sony 259 specifications).
AOL1440L is a Green Product ordering option.
AOL1440 and AOL1440L are electrically identical.
VV_DDSS((VV))==2255VV
II_DD==7755AA((VV_GGSS==1100VV))
RR_DDSS(O(ONN))<<33..22mmΩΩ((VV_GGSS==2200VV))
RR_DDSS(O(ONN))<<44..00mmΩW(V(V_GGSS==1120VV) )
RR_DDSS(O(ONN))<<55..22mmΩ^W(V(V_GGSS==1102VV) ⁾
UUIISSTTeesstteedd
RRgg,,CCiissss,,CCoossss,,CCrrssssTTeesstteedd
Ultra SO-8^TM Top View
Fits SOIC8
footprint !
D
Bottom tab
connected to
S
G
drain
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
V_DS
25
Gate-Source Voltage
V_GS
±30
Continuous Drain T_C=25°C ^G
85
Current ^B,G,
T_C=100°C ^B
I_D
66
Pulsed Drain Current
I_DM
200
Continuous Drain T_A=25°C
25
Current ^G
T_A=70°C
I_DSM
20
Avalanche Current ^C
I_AR
30
Repetitive avalanche energy L=0.3mH^C E_AR
135
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
75
37
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
5
3
Junction and Storage Temperature Range T_J, T_STG
Thermal Characteristics
-55 to 175
Parameter
Symbol
Typ
Maximum Junction-to-Ambient^A
Maximum Junction-to-Ambient^A
t ≤ 10s
Steady-State
R_θJA
19
45
Maximum Junction-to-Case^C
Steady-State
R_θJC
1.5
Max
25
55
2
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com