AOL1436_08 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOL1436
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1436 uses advanced trench technology to
provide excellent R_DS(ON), shoot-through immunity and
body diode characteristics. This device is ideally suite
for use as a High side switch in CPU core power
conversion.
-RoHS Compliant
-Halogen and Antimony Free Green Device*
Features
V_DS (V) = 25V
I_D = 50A (V_GS = 10V)
R_DS(ON) < 6mΩ (V_GS = 20V)
R_DS(ON) < 8.2mΩ (V_GS = 12V)
R_DS(ON) < 11.5mΩ (V_GS = 10V)
UIS Tested
Rg,Ciss,Coss,Crss Tested
Ultra SO-8^TM Top View
D
S
G
D
Bottom tab
connected to
drain
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C ^G
Current ^B
T_C=100°C
I_D
Pulsed Drain Current^C
I_DM
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_DSM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.3mH^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient^A
Maximum Junction-to-Ambient^A
t ≤ 10s
Steady-State
Symbol
R_θJA
Maximum Junction-to-Case^D
Steady-State
R_θJC
G
Maximum
25
±30
50
48
120
15
12
28
118
43
22
2.3
1.4
-55 to 175
Typ
20
46
2.5
S
Max
25
55
3.5
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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