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AOL1434 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor
AOL1434
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1434 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
product AOL1434 is Pb-free (meets ROHS & Sony
259 specifications). AOL1434L is a Green Product
ordering option. AOL1434 and AOL1434L are
electrically identical.
Features
VDS (V) = 25V
ID = 50A (VGS = 10V)
RDS(ON) <6.3 mΩ (VGS = 10V)
RDS(ON) < 10 mΩ (VGS = 4.5V)
Ultra SO-8TM Top View
Fits SOIC8
footprint !
D
S
G
Bottom tab
connected to
drain
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current B
TC=100°C B
ID
Pulsed Drain Current
IDM
Continuous Drain TA=25°C
Current H
TA=70°C
IDSM
Avalanche Current C
IAR
Repetitive avalanche energy L=0.3mH C
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
D
G
S
Maximum
25
20
50
34
150
14
11
30
135
38
13
2.1
1
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
RθJA
18
49
25
60
Maximum Junction-to-Case C
Steady-State
RθJC
2.5
4
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W