AOL1432_08 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOL1432
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1432 uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
-RoHS Compliant
-Halogen and Antimony Free Green Device*
Features
V_DS (V) =25V
I_D = 44 A (VGS = 10V)
R_DS(ON) < 8.5 mΩ (V_GS = 10V)
R_DS(ON) < 14 mΩ (V_GS = 4.5V)
UIS Tested
Rg,Ciss,Coss,Crss Tested
Ultra SO-8^TM Top View
D
S
G
D
Bottom tab
connected to
drain
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TC^=25°C
Current
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain T_A=25°C
Current ^G
T_A=70°C
I_DSM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.3mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
25
±20
44
31
100
12
10
25
94
30
15
2
1.3
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
14.2
48
20
60
Maximum Junction-to-Case ^B
Steady-State
R_θJC
3.5
5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com