AOL1432 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOL1432
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1432 uses advanced trench technology
and design to provide excellent R_DS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
Standard product AOL1432 is Pb-free (meets
ROHS & Sony 259 specifications). AOL1432L is a
Green Product ordering option. AOL1432 and
AOL1432L are electrically identical.
Features
V_DS (V) =25V
I_D = 44 A (VGS = 10V)
R_DS(ON) < 8.5 mΩ (V_GS = 10V)
R_DS(ON) < 14 mΩ (V_GS = 4.5V)
Ultra SO-8^TM Top View
Fits SOIC8
D
footprint !
S
G
D
Bottom tab
connected to
drain
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TC^=25°C
Current
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain T_A=25°C
Current ^G
T_A=70°C
I_DSM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.3mH ^C E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
25
±20
44
31
100
12
9
25
94
30
15
2.1
1.3
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Case ^B
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Typ
14.2
48
3.5
Max
20
60
5
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W