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AOL1428 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor
AOL1428
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1428 uses advanced trench technology to
provide excellent RDS(ON), low gate charge.This device
is suitable for use as a high side switch in SMPS and
general purpose applications. Standard Product
AOL1428 is Pb-free (meets ROHS & Sony 259
specifications). AOL1428L is a Green Product
ordering option. AOL1428 and AOL1428L are
electrically identical.
Features
VDS (V) = 30V
ID = 45A (VGS = 10V)
RDS(ON) <9.5mΩ (VGS = 10V)
RDS(ON) <16mΩ (VGS = 4.5V)
UIS Tested
Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View
Fits SOIC8
footprint !
D
Bottom tab
connected to
S
G
drain
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current B
TC=100°C
ID
Pulsed Drain Current
IDM
Continuous Drain TA=25°C
Current H
TA=70°C
IDSM
Avalanche Current C
IAR
Repetitive avalanche energy L=0.3mH C
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±20
49
34
120
18
14
30
135
43
21
5
3
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
RθJA
19
45
25
55
Maximum Junction-to-Case C
Steady-State
RθJC
2.5
3.5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.