AOL1424 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOL1424
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1424 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and
operation with gate voltages as low as 4.5V,while
retaining a 20V V_GS(MAX) rating. It is ESD
protected.This device is suitable for use as a load
switch. Standard Product AOL1424 is Pb-free (meets
ROHS & Sony 259 specifications).
Features
V_DS (V) = 30V
I_D = 70A (V_GS = 10V)
R_DS(ON) < 5.4mΩ (V_GS = 10V)
R_DS(ON) < 8mΩ (V_GS = 4.5V)
ESD Protected
UIS Tested!
Rg, Ciss,Coss,Crss Tested
Ultra SO-8^TM Top View
Fits SOIC8
footprint !
D
Bottom tab
connected to
S
G
drain
D
G
S
Absolute Maximum Ratings T _A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_C=25°C
Current ^B
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_DSM
Avalanche Current ^H
I_AR
Repetitive avalanche energy L=0.3mH ^H
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
Junction and Storage Temperature Range
P_DSM
T_J, T_STG
Maximum
30
±20
70
50
120
23
18
30
135
50
25
5
3
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
20
45
Maximum Junction-to-Case ^D
Steady-State
R_θJC
2.5
Max
24
55
3.0
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com