AOL1412 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOL1412
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1412 uses advanced trench technology with
a monolithically integrated Schottky diode to provide
excellent R_DS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load
switching and general purpose applications. Standard
Product AOL1412 is Pb-free (meets ROHS & Sony
259 specifications). AOL1412L is a Green Product
ordering option. AOL1412 and AOL1412L are
electrically identical.
Features
V_DS (V) = 30V
I_D =85A (V_GS = 10V)
R_DS(ON) < 3.9mΩ (V_GS = 10V)
R_DS(ON) < 4.6mΩ (V_GS = 4.5V)
UIS Tested
Rg,Ciss,Coss,Crss Tested
Ultra SO-8^TM Top View
Fits SOIC8
footprint !
D
Bottom tab
connected to
S
G
drain
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C ^I
Current ^B
T_C=100°C
I_D
Pulsed Drain Current
I_DM
Continuous Drain T_A=25°C
Current ^H
T_A=70°C
I_DSM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.3mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±12
85
84
200
27
21
40
240
100
50
5
3
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
19.6
50
25
60
Maximum Junction-to-Case ^C
Steady-State
R_θJC
1
1.5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.