AOKS30B60D1 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – High efficient turn-on di/dt controllability

AOKS30B60D1
600V, 30A Alpha IGBT ^TM
General Description
• Latest Alpha IGBT (α IGBT) technology
• High efficient turn-on di/dt controllability
• Very high switching speed
• Low turn-off switching loss and softness
• Very good EMI behavior
• Short-circuit ruggedness
Applications
• Welding Machines
• Motor Drives
• UPS & Solar Inverters
• Very High Switching Frequency Applications
Top View
TO-247
Product Summary
V_CE
I_C (T_C=100°C)
V_CE(sat) (T_C=25°C)
600V
30A
2.0V
C
AOKS30B60D1
E
C
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Collector-Emitter Voltage
V _CE
Gate-Emitter Voltage
V _GE
V_GE Spike
500ns
V_SPIKE
Continuous Collector ^TC=25°C
Current
T_C=100°C
I_C
Pulsed Collector Current, Limited by T_Jmax I _CM
Turn off SOA, V_CE ≤ 600V, Limited by T_Jmax I _LM
Short circuit withstanding time V_GE = 15V, V_CE
≤ 400V, Delay between short circuits ≥
t _SC
1.0s, T_C=25°C
Power Dissipation
T_C=25°C
T_C=100°C
P_D
Junction and Storage Temperature Range T _J , T _STG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
T_L
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient
Maximum IGBT Junction-to-Case
R _{θ JA}
R _{θ JC}
G
E
AOKS30B60D1
600
±20
24
60
30
96
96
10
208
83
-55 to 150
300
AOKS30B60D1
40
0.6
Rev.1.0: May 2015
www.aosmd.com
Units
V
V
V
A
A
A
µs
W
°C
°C
Units
°C/W
°C/W
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