AOK53S60 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – null600V 53A α MOS Power Transistor

AOK53S60
600V 53A α MOS ^TM Power Transistor
General Description
Product Summary
The AOK53S60 has been fabricated using the advanced
αMOS^TM high voltage process that is designed to deliver
high levels of performance and robustness in switching
applications.
By providing low R_DS(on), Q_g and E_OSS along with
guaranteed avalanche capability this part can be adopted
quickly into new and existing offline power supply
designs.
For Halogen Free add "L" suffix to part number:
AOK53S60L
V_DS @ T_j,max
I_DM
R_DS(ON),max
Q_g,typ
E_oss @ 400V
100% UIS Tested
100% R_g Tested
Top View
TO247
700V
215A
0.07Ω
59nC
15µJ
D
AOK53S60
S
D
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy ^C
E_AR
Single pulsed avalanche energy ^G
E_AS
T_C=25°C
Power Dissipation ^B _{Derate above 25}^o_C
P_D
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
dv/dt
Junction and Storage Temperature Range
T_J, T_STG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds ^J
T_L
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient ^A,D
R_θJA
Maximum Case-to-sink ^A
R_θCS
Maximum Junction-to-Case
R_θJC
G
AOK53S60
600
±30
53
33
215
9.5
45
1688
520
4.2
100
20
-55 to 150
300
AOK53S60
40
0.5
0.24
Rev0: Sep 2012
www.aosmd.com
S
Units
V
V
A
A
mJ
mJ
W
W/ ^oC
V/ns
°C
°C
Units
°C/W
°C/W
°C/W
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