AOK20B120E1 Datasheet, PDF (1/8 Pages) Alpha & Omega Semiconductors – Low turn-off switching loss due to fast turn-off time

AOK20B120E1
1200V, 20A Alpha IGBT ^TM with Diode
General Description
• Latest AlphaIGBT (α IGBT) technology
• Best in Class V_CE(SAT) enables high efficiencies
• Low turn-off switching loss due to fast turn-off time
• Very smooth turn-off current waveforms reduce EMI
• Better thermal management
• High surge current capability
• Minimal gate spike due to high input capacitance
Applications
• Induction Cooking
• Rice Cookers
• Microwave Ovens
• Other soft switching applications
Top View
TO-247
Product Summary
V_CE
I_C (T_C=100°C)
V_CE(sat) (T_C=25°C)
1200V
20A
1.68V
C
AOK20B120E1
E
C
G
G
E
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOK20B120E1
TO247
Tube
240
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
AOK20B120E1
Units
Collector-Emitter Voltage
V _CE
1200
V
Gate-Emitter Voltage
V _GE
±30
V
Continuous Collector ^TC^=25°C
Current
T_C=100°C
I_C
40
20
A
Pulsed Collector Current, Limited by T_Jmax
I _Cpulse
80
A
Non repetitive peak collector current^A
I _CSM
200
A
Turn off SOA, V_CE ≤ 600V, Limited by T_Jmax
I _LM
80
A
Continuous Diode
Forward Current
T_C=25°C
T_C=100°C
I_F
40
20
A
Diode Pulsed Current, Limited by T_Jmax
I _Fpulse
80
A
Power Dissipation
T_C=25°C
T_C=100°C
P_D
333
167
W
Junction and Storage Temperature Range
T _J , T _STG
-55 to 175
°C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
T_L
300
°C
Thermal Characteristics
Parameter
Symbol
AOK20B120E1
Units
Maximum Junction-to-Ambient
Maximum IGBT Junction-to-Case
R _{θ JA}
R _{θ JC}
40
0.45
°C/W
°C/W
Maximum Diode Junction-to-Case
R _{θ JC}
1.6
°C/W
Note A: Capacitor charging saturation current limited by T_jmax<175°C and t_p<3µs
Rev.1.0: March 2015
www.aosmd.com
Page 1 of 8