AOK18N65 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 650V,18A N-Channel MOSFET

AOK18N65
650V,18A N-Channel MOSFET
General Description
Product Summary
The AOK18N65 is fabricated using an advanced high
voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC
applications.By providing low R_DS(on), C_iss and C_rss along
with guaranteed avalanche capability this part can be
adopted quickly into new and existing offline power supply
designs.
For Halogen Free add "L" suffix to part number:
AOK18N65L
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested
100% R_g Tested
Top View
TO-247
750V@150℃
18A
< 0.39Ω
D
AOK18N65
S
D
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain
T_C=25°C
Current
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^C
Repetitive avalanche energy ^C
Single pulsed avalanche energy ^G
Peak diode recovery dv/dt
V_GS
I_D
I_DM
I_AR
E_AR
E_AS
dv/dt
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
T_L
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A,D
Maximum Case-to-sink ^A
Maximum Junction-to-Case
Symbol
R_θJA
R_θCS
R_θJC
G
AOK18N65
650
±30
18
12
80
6.3
595
1190
5
417
3.3
-55 to 150
300
AOK18N65
40
0.5
0.3
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev0: Dec 2011
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