AOI472A Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOI472A
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOI472A is fabricated with SDMOS^TM trench
technology that combines excellent R_DS(ON) with low gate
charge.The result is outstanding efficiency with
controlled switching behavior. This universal technology
is well suited for PWM, load switching and general
purpose applications.
V_DS (V) =25V
I_D = 50A
R_DS(ON) < 5.2mΩ
R_DS(ON) < 9.5mΩ
(V_GS = 10V)
(V_GS = 10V)
(V_GS = 4.5V)
- RoHS Compliant
- Halogen Free
100% UIS Tested!
100% Rg Tested!
TO-251A
IPAK
D
Top View
Bottom View
D
S
D
G
G
D
S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=50uH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
25
±20
50
39
100
17
13
50
63
50
25
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
t ≤ 10s
Steady-State
R_θJA
15
41
20
50
Maximum Junction-to-Case
Steady-State
R_θJC
2.1
3
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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