AOI452 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOI452
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOI452 uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
Product AOI452 is Pb-free (meets ROHS & Sony 259
specifications).
Features
V_DS (V) =25V
I_D = 55 A (V_GS = 10V)
R_DS(ON) < 8.7 mΩ (V_GS = 10V)
R_DS(ON) < 14.7 mΩ (V_GS = 4.5V)
UIS Tested
Rg,Ciss,Coss,Crss Tested
IPAK
D
GD S
Top View
Drain Connected
to Tab
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C
Current ^G
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
25
±20
55
40
100
40
80
50
25
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Case ^B
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Typ
14.2
39
2.5
Max
20
50
3
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com