AOH3110 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 100V N-Channel MOSFET

AOH3110
100V N-Channel MOSFET
General Description
Product Summary
The AOH3110 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R_DS(ON). This device is ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS=4.5V)
100V
1.0A
< 700mΩ
< 820mΩ
SOT223
D
Top View
Bottom View
D
D
S
D
G
G
D
S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AS
Avalanche energy L=50uH ^C
E_AS
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
100
±20
1
0.8
4
3.5
0.3
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
33
60
Maximum Junction-to-Lead
Steady-State
R_θJL
30
Max
40
75
40
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: Jan. 2012
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