AOE6932_36_PR Datasheet, PDF (1/2 Pages) Alpha & Omega Semiconductors – AOE6932 improves gate driving performance

Alpha and Omega Semiconductor
475 Oakmead Parkway, Sunnyvale, California 94085 USA
FOR IMMEDIATE RELEASE
Media Contact: Mina Galvan
Tel: [phone]
Email: [e-mail]
Alpha and Omega Semiconductor Expands Its New PairFET™ Family
New PairFET^TM series sets new industry standard with improved thermals and higher efficiency
SUNNYVALE, Calif., Sep. 14, 2016 – Alpha and Omega Semiconductor Limited (AOS) (Nasdaq: AOSL), a designer,
developer and global supplier of a broad range of power semiconductors and power ICs, today introduced two new products
based on its high efficiency XS-PairFET package and latest low voltage technology. The AOE6932 and AOE6936 are the
newest extensions to the flagship device, AOE6930, that was released in 2015. Both products are newly optimized for
enhanced driving and switching performance.
AOE6932 improves gate driving performance and reduces power loss at relatively low output current. AOE6936 features a
20V gate voltage tolerance with much smaller parasitic capacitances. Both devices offer the same 8mohm (max) Rdson
(@4.5V gate driving voltage) on the high side, but present different Rdson values for the low side FET. AOE6932 is
designed with a 1.8mohm (max) @ 4.5Vgs low side FET, while AOE6936 is designed with a 3mohm (max) low side FET.
Application tests show that these distinct configurations uniquely optimize each device to achieve the best efficiency and
address specific application requirements, such as the input-output voltage headroom, and current per phase for the Vcore
power supply.
“Our first product packaged in a PairFET with a bottom-sourced low-side FET was released last year, and the AOE6930 is
now widely accepted by leading customers in notebook PC, desktop PC, and high-end VGA designs. The benefits offered by
this structure are significant. With direct thermal dissipation from the low side source down to the copper layer of the PCB,
the temperature rise can be well controlled in the power device. With the newly released AOE6932 and AOE6936, we offer
wide coverage of various application conditions, with optimal cost effectiveness. This product family is setting a new
industry standard for high power density circuit design in all POL applications,” said Lei Feng, Sr. Marketing Director of
MOSFET product line at AOS.
Device Specification Table
Part
Number
AOE6932
AOE6936
AOE6930
(reference)
Package
VDS (V)
VGS
(±V)
High Side
30
20
Low Side
30
12
High Side
30
20
Low Side
30
20
High Side
30
20
Low Side
30
12
RDS(ON) (mΩ
max)* at VGS=
10V 4.5V
5
8
1.4
1.8
5
8
2
3
4.3
7
0.83 1.05
VGS(th)
(max V)
2.2
1.9
2.2
2.1
2.1
1.9
Ciss
(pF)
1150
4180
1150
2270
1075
5560
Coss
(pF)
380
880
380
650
480
1670
Crss
(pF)
55
125
55
90
55
200
Qg*
(nC)
7.5
30
7.5
15
7
42
Qgd
(nC)
3
7
3
4.5
2.5
12
Tel: [phone] • Fax: [phone] •www.aosmd.com
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