AOD9N52 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 520V,9A N-Channel MOSFET

AOD9N52
520V,9A N-Channel MOSFET
General Description
Product Summary
The AOD9N52 have been fabricated using an advanced
high voltage MOSFET process that is designed to deliver
high levels of performance and robustness in popular AC-
DC applications.
By providing low R_DS(on), C_iss and C_rss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested!
100% R_g Tested!
620V@150℃
9A
< 0.86Ω
TO252
DPAK
D
Top View
Bottom View
D
D
S
G
G
S
S
G
AOD9N52
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
V_DS
520
Gate-Source Voltage
V_GS
±30
Continuous Drain
Current^B
T_C=25°C
T_C=100°C
I_D
9
5.7
Pulsed Drain Current ^C
I_DM
27
Avalanche Current ^C
I_AR
3.8
Repetitive avalanche energy ^C
E_AR
216
Single pulsed avalanche energy ^H
E_AS
433
Peak diode recovery dv/dt
dv/dt
5
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
178
1.4
Junction and Storage Temperature Range
T_J, T_STG
-50 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
T_L
300
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A,G
Maximum Case-to-sink ^A
Maximum Junction-to-Case^D,F
Symbol
R_θJA
R_θCS
R_θJC
Typical
45
-
0.5
Maximum
55
0.5
0.7
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev 0: May 2012
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