AOD9N50 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 500V,9A N-Channel MOSFET

AOD9N50/AOI9N50
500V,9A N-Channel MOSFET
General Description
Product Summary
The AOD9N50 & AOI9N50 have been fabricated using an
advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in
popular AC-DC applications.
By providing low R_DS(on), C_iss and C_rss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested!
100% R_g Tested!
600V@150℃
9A
< 0.86Ω
Top View
TO252
DPAK
Bottom View
Top View
TO251A
IPAK
Bottom View
D
D
S
G
S
S
D
G
G
D
S
G
G
AOD9N50
AOI9N50
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
V_DS
500
Gate-Source Voltage
V_GS
±30
Continuous Drain
Current^B
T_C=25°C
T_C=100°C
I_D
9
5.7
Pulsed Drain Current ^C
I_DM
27
Avalanche Current ^C
I_AR
3.8
Repetitive avalanche energy ^C
E_AR
216
Single pulsed avalanche energy ^H
E_AS
433
Peak diode recovery dv/dt
dv/dt
5
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
178
1.4
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
T_J, T_STG
T_L
-50 to 150
300
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A,G
Maximum Case-to-sink ^A
Maximum Junction-to-Case^D,F
Symbol
R_θJA
R_θCS
R_θJC
Typical
45
-
0.5
Maximum
55
0.5
0.7
D
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev 0: Feb 2012
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