AOD8N25 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 250V,8A N-Channel MOSFET

AOD8N25/AOI8N25
250V,8A N-Channel MOSFET
General Description
Product Summary
The AOD8N25 & AOI8N25 have been fabricated using an
advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in
popular AC-DC applications.
By providing low R_DS(on), C_iss and C_rss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.These parts are ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested!
100% R_g Tested!
300V@150℃
8A
< 0.56Ω
Top View
TO252
DPAK
Bottom View
Top View
TO251A
IPAK
Bottom View
D
D
G
S
G
S
S
D
G
G
D
S
G
AOD8N25
AOI8N25
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
V_DS
250
Gate-Source Voltage
V_GS
±30
Continuous Drain
Current^B
T_C=25°C
T_C=100°C
I_D
8
5
Pulsed Drain Current ^C
I_DM
16
Avalanche Current ^C
I_AS
2.1
Single pulsed avalanche energy ^H
E_AS
132
Peak diode recovery dv/dt
dv/dt
5
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
78
0.63
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
T_J, T_STG
T_L
-50 to 150
300
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A,G
Maximum Case-to-sink ^A
Maximum Junction-to-Case^D,F
Symbol
R_θJA
R_θCS
R_θJC
Typical
45
-
1.3
Maximum
55
0.5
1.6
D
S
Units
V
V
A
A
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev 1: Feb 2012
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