AOD609 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

AOD609
Complementary Enhancement Mode Field Effect Transistor
General Description
The AOD609/L uses advanced trench technology
MOSFETs to provide excellent R_DS(ON) and low gate
charge. The complementary MOSFETs may be
used in H-bridge, Inverters and other applications.
AOD609 and AOD609L are electrically identical.
-RoHS Compliant
-AOD609L is Halogen Free
Features
n-channel
V_DS (V) = 40V, I_D = 12A (V_GS=10V)
R_DS(ON)< 30mΩ (V_GS=10V)
R_DS(ON)< 40mΩ (V_GS=4.5V)
p-channel
V_DS (V) = -40V, I_D = -12A (V_GS=-10V)
R_DS(ON)< 45mΩ (VGS= -10V)
R_DS(ON)< 66mΩ (VGS= -4.5V)
TO-252-4L
D-PAK
D1/D2
Top View
Drain Connected
to Tab
D2
D1
G2
S2
G1
S1
S2 G2 S1 G1
n-channel
p-channel
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Max p-channel
Drain-Source Voltage
V_DS
40
-40
Gate-Source Voltage
V_GS
±20
±20
Continuous Drain
T_C=25°C
12
-12
Current ^B,H
T_C=100°C
I_D
12
-12
Pulsed Drain Current ^B
I_DM
30
-30
Avalanche Current ^C
I_AR
14
-20
Repetitive avalanche energy L=0.1mH ^C
E_AR
9.8
20
Power Dissipation
T_C=25°C
T_C=100°C
P_D
27
14
30
15
Power Dissipation
T_A=25°C
T_A=70°C
P_DSM
2
1.3
2
1.3
Junction and Storage Temperature Range
T_J, T_STG
-55 to 175
-55 to 175
Thermal Characteristics: n-channel and p-channel
Parameter
Symbol
Device
Typ
Max
Maximum Junction-to-Ambient ^A,D
Maximum Junction-to-Ambient ^A,D
t ≤ 10s
Steady-State
R_θJA
n-ch
n-ch
17.4
25
50
60
Maximum Junction-to-Lead ^C
Steady-State
R_θJC
n-ch
4
5.5
Maximum Junction-to-Ambient ^A,D
Maximum Junction-to-Ambient ^A,D
t ≤ 10s
Steady-State
R_θJA
p-ch
p-ch
16.7
25
50
60
Maximum Junction-to-Lead ^C
Steady-State
R_θJC
p-ch
3.5
5
Units
V
V
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com