AOD608 Datasheet, PDF (1/9 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

AOD608
Complementary Enhancement Mode Field Effect Transistor
General Description
The AOD608 uses advanced trench
technology MOSFETs to provide
excellent R_DS(ON) and low gate charge.
The complementary MOSFETs may be
used in H-bridge, Inverters and other
applications. Standard product AOD608 is
Pb-free (meets ROHS & Sony 259
specifications).
Features
n-channel
p-channel
V_DS (V) = 40V
-40V
I_D = 10A (V_GS=10V)
-10A (V _GS = -10V)
R_DS(ON)
R_DS(ON)
< 39 mΩ (V_GS=10V)
< 51 m Ω (V_GS = -10V)
< 50 mΩ (V_GS=4.5V) < 75 m Ω (V_GS = -4.5V)
ESD rating: 3000V (HBM)
TO-252-4L
D-PAK
D1/D2
D1
D2
Top View
Drain Connected
to Tab
G1
G2
S1
S2
n-channel
S1 G1
S2 G2
Absolute Maximum Ratings T _A=25°C unless otherwise noted
Parameter
Symbol Max n-channel
Drain-Source Voltage
V_DS
40
Gate-Source Voltage
V_GS
±20
Continuous Drain T_C=25°C
10
Current ^G
T_C=100°C
I_D
10
Pulsed Drain Current ^C
I_DM
30
Avalanche Current ^C
I_AR
12
Repetitive avalanche energy L=0.3mH ^C
E_AR
21
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
20
10
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
2
1.3
Junction and Storage Temperature Range TJ, TSTG
-55 to 175
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Case ^B
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Case ^B
t ≤ 10s
Steady-State
Steady-State
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
R_θJA
R_θJC
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
p-channel
Max p-channel
-40
±20
-10
-10
-30
-15
33
50
25
2.5
1.6
-55 to 175
Typ Max
19
23
50
60
4
7.5
19
23
50
60
2.5
3
Units
V
V
A
A
mJ
W
W
°C
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.