AOD606_08 Datasheet, PDF (1/11 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

AOD606
Complementary Enhancement Mode Field Effect Transistor
General Description
The AOD606 uses advanced trench
technology MOSFETs to provide
excellent R_DS(ON) and low gate charge.
The complementary MOSFETs may be
used in H-bridge, Inverters and other
applications.
-RoHS Compliant
-Halogen Free*
Features
n-channel
p-channel
V_DS (V) = 40V
I_D = 8A (V_GS=10V)
R_DS(ON)
-40V
-8A (V_GS = -10V)
R_DS(ON)
< 33 mΩ (V_GS=10V)
< 50 mΩ (V_GS = -10V)
< 47 mΩ (V_GS=4.5V) < 70 mΩ (V_GS = -4.5V)
100% UIS Tested!
Top View ^D
TO-252-4L
D-PAK _{Bottom View}
D1/D2
G2
S2
D1/D2
S1 ^G1
G1
S1
n-channel
G2
S2
p-channel
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol Max n-channel Max p-channel
Drain-Source Voltage
V_DS
40
-40
Gate-Source Voltage
V_GS
±20
±20
Continuous Drain T_C=25°C
Current ^G
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.3mH ^C
E_AR
8
6.3
30
12
21.6
-8
-6.3
-30
14
29.4
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
20
10
30
15
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
1.6
1
1.7
1.1
Junction and Storage Temperature Range T_J, T_STG
-55 to 175
-55 to 175
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
Symbol Device Typ
R_θJA
n-ch
n-ch
25
66
Max
30
80
Maximum Junction-to-Case ^B
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Steady-State
t ≤ 10s
Steady-State
R_θJC
n-ch
7
7.5
R_θJA
p-ch
p-ch
17
60
25
75
Maximum Junction-to-Case ^B
Steady-State
R_θJC
p-ch
4
5
Units
V
V
A
A
mJ
W
W
°C
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com