AOD604 Datasheet, PDF (1/9 Pages) –

AOD604
Complementary Enhancement Mode Field Effect Transistor
General Description
The AOD604 uses advanced trench
technology MOSFETs to provide excellent
R_DS(ON) and low gate charge. The
complementary MOSFETs may be used
in H-bridge, Inverters and other
applications. Standard product AOD604 is Pb-
free (meets ROHS & Sony 259 specifications).
AOD604L is a Green Product ordering option.
AOD604 and AOD604L are electrically
identical.
TO-252
D-PAK
Features
n-channel
p-channel
V_DS (V) = 40V
I_D = 8A (V_GS=10V)
R_DS(ON)
-40V
-8A (V_GS = -10V)
R_DS(ON)
< 33 mΩ (V_GS=10V)
< 50 m Ω (V_GS = -10V)
< 47 mΩ (V_GS=4.5V) < 70 m Ω (V_GS = -4.5V)
D2
D1
Top View
Drain Connected to
Tab
G2
S2
G1
S1
n-channel
p-channel
S1 G1 D1/D2 G2 S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol Max n-channel
Drain-Source Voltage
V_DS
40
Gate-Source Voltage
V_GS
±20
Continuous Drain
T_C=25°C
8
Current ^G
T_C=100°C
I_D
8
Pulsed Drain Current ^C
I_DM
30
Avalanche Current ^C
I_AR
8
Repetitive avalanche energy L=0.1mH ^C
E_AR
20
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
20
10
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
2
1.3
Junction and Storage Temperature Range T_J, T_STG
-55 to 175
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
Symbol
R_θJA
Device
n-ch
n-ch
Maximum Junction-to-Case ^B
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Steady-State
t ≤ 10s
Steady-State
R_θJC
R_θJA
n-ch
p-ch
p-ch
Maximum Junction-to-Case ^B
Steady-State
R_θJC
p-ch
Max p-channel
-40
±20
8
8
-30
-8
30
50
25
2.5
1.6
-55 to 175
Typ
Max
17.4
30
50
60
4
7.5
16.7
25
40
50
2.5
3
Units
V
V
A
A
mJ
W
W
°C
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.