AOD603A Datasheet, PDF (1/11 Pages) Alpha & Omega Semiconductors – 60V Complementary MOSFET

AOD603A
60V Complementary MOSFET
General Description
The AOD603A uses advanced trench technology
MOSFETs to provide excellent R_DS(ON) and low gate
charge. The complementary MOSFETs may be
used in H-bridge, Inverters and other applications.
Product Summary
N-Channel
V_DS= 60V
I_D= 13A (V_GS=10V)
R_DS(ON)
< 60mΩ (V_GS=10V)
< 85mΩ (V_GS=4.5V)
100% UIS Tested
100% R_g Tested
P-Channel
-60V
-13A (V_GS=-10V)
R_DS(ON)
< 115mΩ (V_GS=-10V)
< 150mΩ (V_GS=-4.5V)
100% UIS Tested
100% R_g Tested
Top View
TO252-4L
DPAK
Bottom View
D1/D2
D1
D2
G1
G2
D1/D2
S2 ^G2
S1G1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol Max N-channel
S1
N-channel
S2
P-channel
Max P-channel
Units
Drain-Source Voltage
V_DS
60
-60
V
Gate-Source Voltage
V_GS
±20
±20
V
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
12
-12
9.5
-9.5
A
Pulsed Drain Current ^C
I_DM
30
-30
Continuous Drain
Current
T_A=25°C
T_A=70°C
3.5
-3
I_DSM
3
-2.5
A
Avalanche Current ^C
I_AS, I_AR
19
25
A
Avalanche energy L=0.1mH ^C
E_AS, E_AR
18
31
mJ
T_C=25°C
Power Dissipation ^B T_C=100°C
27
42.5
P_D
13.5
21.5
W
T_A=25°C
Power Dissipation ^A T_A=70°C
2
2
P_DSM
1.3
1.3
W
Junction and Storage Temperature Range
T_J, T_STG
-55 to 175
-55 to 175
°C
Thermal Characteristics
Parameter N-channel
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
19
50
Maximum Junction-to-Case
Steady-State
R_θJC
4
Parameter P-channel
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
19
50
Maximum Junction-to-Case
Steady-State
R_θJC
2.5
Max
23
60
5.5
Max
23
60
3.5
Units
°C/W
°C/W
°C/W
Units
°C/W
°C/W
°C/W
Rev 0: Sep. 2011
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