AOD603 Datasheet, PDF (1/9 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

AOD603
Complementary Enhancement Mode Field Effect Transistor
General Description
The AOD603 uses advanced trench technology
MOSFETs to provide excellent R_DS(ON) and low gate
charge. The complementary MOSFETs may be used
in H-bridge, Inverters and other applications.
Standard Product AOD603 is Pb-free (meets ROHS
& Sony 259 specifications). AOD603L is a Green
Product ordering option. AOD603 and AOD603L are
electrically identical.
TO-252
D-PAK
Features
n-channel
p-channel
V_DS (V) = 60V
-60V
I_D = 12A (V_GS=10V) -12A (VGS=-10V)
R_DS(ON)
R_DS(ON)
< 60mΩ (V_GS=10V)
< 115m Ω (V_GS =- 10V)
< 85mΩ (V_GS=4.5V)
< 150m Ω (V_GS = -4.5V)
D2
D1
Top View
Drain Connected to
Tab
G2
S2
G1
S1
n-channel
p-channel
S1 G1 D1/D2 G2 S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol Max n-channel
Drain-Source Voltage
V_DS
60
Gate-Source Voltage
V_GS
±20
Continuous Drain
T_C=25°C
12
Current ^G
T_C=100°C
I_D
12
Pulsed Drain Current ^C
I_DM
30
Avalanche Current ^C
I_AR
12
Repetitive avalanche energy L=0.1mH ^C
E_AR
23
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
20
10
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
2
1.3
Junction and Storage Temperature Range T_J, T_STG
-55 to 175
Max p-channel
-60
±20
-12
-10
-30
-12
23
37.5
18.8
2.5
1.6
-55 to 175
Thermal Characteristics: n-channel and p-channel
Parameter
Symbol Device Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
n-ch 17.4
n-ch 50
30
60
Maximum Junction-to-Case ^B
Steady-State
R_θJC
n-ch
4
7.5
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
p-ch 16.7
p-ch 40
25
50
Maximum Junction-to-Case ^B
Steady-State
R_θJC
p-ch
2.5
4
Units
V
V
A
A
mJ
W
W
°C
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.