AOD5N40 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 400V,4.2A N-Channel MOSFET

AOD5N40/AOI5N40
400V,4.2A N-Channel MOSFET
General Description
Product Summary
The AOD5N40 & AOI5N40 have been fabricated using an
advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in
popular AC-DC applications.
By providing low R_DS(on), C_iss and C_rss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested!
100% R_g Tested!
500V@150℃
4.2A
< 1.6Ω
Top View
TO252
DPAK
Bottom View
Top View
TO251A
IPAK
Bottom View
D
D
G
S
G
G
S
S
D
G
G
D
S
AOD5N40
AOI5N40
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TC^=25°C
Current^B
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^C
Repetitive avalanche energy ^C
Single pulsed avalanche energy ^H
Peak diode recovery dv/dt
I_D
I_DM
I_AR
E_AR
E_AS
dv/dt
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
T_J, T_STG
T_L
Maximum
400
±30
4.2
2.8
10
1.7
43
86
5
78
0.63
-50 to 150
300
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A,G
Maximum Case-to-sink ^A
Maximum Junction-to-Case^D,F
Symbol
R_θJA
R_θCS
R_θJC
Typical
38
-
1.33
Maximum
55
0.5
1.6
D
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev1: Jan 2012
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