AOD5B60D Datasheet, PDF (1/9 Pages) Alpha & Omega Semiconductors – 600V, 5A Alpha IGBT with Diode

AOD5B60D
600V, 5A Alpha IGBT ^TM with Diode
General Description
Product Summary
The Alpha IGBT^TM line of products offers best-in-class
performance in conduction and switching losses, with
robust short circuit capability. They are designed for ease
of paralleling, minimal gate spike under high dV/dt
conditions and resistance to oscillations. The soft co-
package diode is targeted for minimal losses in motor
control applications.
V_CE
I_C (T_C=100°C)
V_CE(sat) (T_C=25°C)
600V
5A
1.55V
Top View
TO252
DPAK
Bottom View
C
C
E
G
G
E
AOD5B60D
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Collector-Emitter Voltage
V _CE
Gate-Emitter Voltage
V _GE
Continuous Collector ^TC=25°C
Current
T_C=100°C
I_C
Pulsed Collector Current, Limited by T_Jmax
I _CM
Turn off SOA, V_CE ≤ 600V, Limited by T_Jmax
I _LM
Continuous Diode
Forward Current
T_C=25°C
T_C=100°C
I_F
Diode Pulsed Current, Limited by T_Jmax
I _FM
Short circuit withstanding time V_GE = 15V, V_CE ≤
400V, delay between short circuits ≥ 1.0s,
t _SC
T_C=150°C
Power Dissipation
T_C=25°C
T_C=100°C
P_D
Junction and Storage Temperature Range
T _J , T _STG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
T_L
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient
Maximum IGBT Junction-to-Case
R _{θ JA}
R _{θ JC}
Maximum Diode Junction-to-Case
R _{θ JC}
G
AOD5B60D
600
±20
10
5
20
20
10
5
20
10
54.4
21.7
-55 to 150
300
AOD5B60D
55
2.3
3
C
E
Units
V
V
A
A
A
A
A
µs
W
°C
°C
Units
°C/W
°C/W
°C/W
Rev1: Nov 2012
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