AOD4C60 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 600V, 4A- N-Channel MOSFET

AOD4C60
600V,4A N-Channel MOSFET
General Description
Product Summary
The AOD4C60 is fabricated using an advanced high
voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC
applications. By providing low R_DS(on), C_iss and C_rss along
with guaranteed avalanche capability this part can be
adopted quickly into new and existing offline power supply
designs.
V_DS @ T_j,max
I_DM
R_DS(ON),max
Q_g,typ
E_oss @ 400V
100% UIS Tested!
100% R_g Tested!
700
27A
< 0.95Ω
14nC
2.7µC
Top View
TO252
DPAK
Bottom View
D
D
S
G
G
S
G
AOD4C60
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain
Current^B
T_C=25°C
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^C
Repetitive avalanche energy ^C
Single pulsed avalanche energy ^H
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
V_GS
I_D
I_DM
I_AR
E_AR
E_AS
dv/dt
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
T_J, T_STG
T_L
Maximum
600
±30
4
3.5
27
8.5
36
326
100
20
125
1
-50 to 150
300
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A,G
Maximum Case-to-sink ^A
Maximum Junction-to-Case^D,F
Symbol
R_θJA
R_θCS
R_θJC
Typical
45
-
0.7
Maximum
55
0.5
1
D
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev.1.0 April 2013
www.aosmd.com
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