AOD494 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOD494
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD494 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge.This device
is suitable for use as a high side switch in SMPS and
general purpose applications. Standard Product
AOD494 is Pb-free (meets ROHS & Sony 259
specifications). AOD494L is a Green Product ordering
option. AOD494 and AOD494L are electrically
identical.
Features
V_DS (V) = 30V
I_D = 55A (V_GS = 10V)
R_DS(ON) <11mΩ (V_GS = 10V)
R_DS(ON) < 13.5mΩ (V_GS = 4.5V)
TO-252
D-PAK
D
Top View
Drain Connected to
Tab
GD S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TC^=25°C
Current
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.3mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±12
55
39
120
30
135
63
31
4
2.6
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A,D
Maximum Junction-to-Ambient ^A,D
t ≤ 10s
Steady-State
R_θJA
15
41
Maximum Junction-to-Case ^B
Steady-State
R_θJC
2
Max
20
50
2.4
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.