AOD490 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOD490
N-Channel Enhancement Mode Field Effect Transistor
SRFET ^TM
General Description
The AOD490 uses advanced trench technology with a
monolithically integrated Schottky diode to provide
excellent R_DS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load
switching and general purpose applications.
-RoHS Compliant
-Halogen Free*
Features
V_DS (V) = 30V
I_D =40A (V_GS = 10V)
R_DS(ON) < 6.8mΩ (V_GS = 10V)
R_DS(ON) < 8.3mΩ (V_GS = 4.5V)
100% UIS Tested!
100% Rg Tested!
Top View
D
TO-252
D-PAK _{Bottom View}
D
SRFET^TM
Soft Recovery MOSFET:
G
Integrated Schottky Diode
G
S
S
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C ^G
Current ^B
T_C=100°C ^G
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain ^TA^=25°C
Current^A
T_A=70°C
I_DSM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.3mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
S
Maximum
30
±12
40
31
100
15
12
30
135
63
31
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
15
41
20
50
Maximum Junction-to-Case ^D
Steady-State
R_θJC
2
2.4
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.