AOD482 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 100V N-Channel MOSFET

AOD482/AOI482
100V N-Channel MOSFET
General Description
The AOD482/AOI482 combines advanced trench
MOSFET technology with a low resistance package to
provide extremely low R_DS(ON). This device is ideal for
boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED
backlighting.
Product Summary
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
100% UIS Tested
100% R_g Tested
100V
32A
< 37mΩ
< 42mΩ
TO252
TO-251A
DPAK
IPAK
D
TopView
Bottom View
Top View
Bottom View
D
D
DS
G
DG
S
S
D
G
G
G
D
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
V_DS
100
Gate-Source Voltage
V_GS
±20
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
32
22
Pulsed Drain Current ^C
I_DM
70
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
5
4
Avalanche Current ^C
I_AS, I_AR
35
Avalanche energy L=0.1mH ^C
E_AS, E_AR
61
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
100
50
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
2.5
1.6
Junction and Storage Temperature Range
T_J, T_STG
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Typ
14.2
39
0.8
Max
20
50
1.5
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 2 : July 2011
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