AOD472A Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – N-Channel SDMOSTM POWER Transistor

AOD472A
N-Channel SDMOS^TM POWER Transistor
General Description
Features
The AOD472A/L is fabricated with SDMOS^TM trench
technology that combines excellent R_DS(ON) with low gate
charge.The result is outstanding efficiency with controlled
switching behavior. This universal technology is well suited
for PWM, load switching and general purpose applications.
AOD472A and AOD472AL are electrically identical.
-RoHS Compliant
-AOD472AL is Halogen Free
V_DS (V) = 25V
I_D = 55A
R_DS(ON) < 5.5mΩ
R_DS(ON) < 9.5mΩ
(V_GS = 10V)
(V_GS = 10V)
(V_GS = 4.5V)
100% UIS Tested!
100% R _g Tested!
TO-252
Top View
D-PAK
Bottom View
D
D
G
S
S
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C
Current^G
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Pulsed Forward Diode Current^C
I_SM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=50uH ^C
E_AR
Power Dissipation ^B
T_C=25°C
T_C=100°C
P_D
Power Dissipation ^A
T_A=25°C
T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
G
Maximum
25
±20
55
43
100
100
50
63
50
25
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Case ^B
Maximum Junction-to-TAB ^B
Symbol
Typ
t ≤ 10s
Steady-State
R_θJA
15
41
Steady-State
R_θJC
2.1
Steady-State
R_θJC-TAB
2.4
S
Max
20
50
3
3.4
Units
V
V
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com