AOD468 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 300V,11.5A N-Channel MOSFET

AOD468/AOI468
300V,11.5A N-Channel MOSFET
General Description
Product Summary
The AOD468 & AOI468 have been fabricated using an
advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in
popular AC-DC applications.By providing low R_DS(on), C_iss
and C_rss along with guaranteed avalanche capability these
parts can be adopted quickly into new and existing offline
power supply designs.These parts are ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested!
100% R_g Tested!
350V@150℃
11.5A
<0.42Ω
Top View
TO252
DPAK
Bottom View
Top View
TO251A
IPAK
Bottom View
D
D
S
G
G
S
S
D
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current^B
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy ^C
E_AR
Single pulsed avalanche energy ^H
E_AS
Peak diode recovery dv/dt
dv/dt
T_C=25°C
Power Dissipation ^B _{Derate above 25}^o_C
P_D
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
T_J, T_STG
T_L
G
D
S
Maximum
300
±30
11.5
8.3
29
3.8
216
430
5
150
1
-50 to 175
300
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A,G
Maximum Case-to-sink ^A
Maximum Junction-to-Case^D,F
Symbol
R_θJA
R_θCS
R_θJC
Typical
45
-
0.7
Maximum
55
0.5
1
D
G
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev0: Dec 2010
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