AOD466_08 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOD466
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD466 uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
-RoHS Compliant
-Halogen Free*
Top View
D
TO-252
D-PAK _{Bottom View}
Features
V_DS (V) = 25V
I_D = 30A (V_GS = 10V)
R_DS(ON) < 14 mΩ (V_GS = 10V)
R_DS(ON) < 24 mΩ (V_GS = 4.5V)
100% UIS Tested!
100% Rg Tested!
D
G
S
S
G
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_C=25°C
Current ^G
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy 0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
Symbol
R_θJA
Maximum Junction-to-Case ^B
Steady-State
R_θJC
Maximum
25
±20
30
25
70
20
20
30
15
2.5
1.6
-55 to 175
Typ
15
41
3.6
Max
20
50
5
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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