AOD464_10 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOD464
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD464 uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate
charge. This device is suitable for use in high voltage
synchronous rectification , load switching and general
purpose applications.
-RoHS Compliant
-Halogen Free*
Features
V_DS (V) = 105V
I_D = 40 A
(V_GS =10V)
R_DS(ON) < 28 mΩ (V_GS =10V) @ 20A
R_DS(ON) < 31 mΩ (V_GS = 6V)
100% UIS Tested!
100% Rg Tested!
TO-252
Top View
D-PAK _{Bottom View}
D
D
G
S
S
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C
Current
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
T_A=25°C
Power Dissipation ^A T_A=70°C
Junction and Storage Temperature Range
P_D
P_DSM
T_J, T_STG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Case ^B
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
G
S
Maximum
105
±25
40
28
80
20
20
100
50
2.3
1.5
-55 to 175
Typ
Max
15
18
45
55
1
1.5
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
www.aosmd.com