AOD456_08 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOD456
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD456 uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
-RoHS Compliant
-Halogen Free*
Top View
D
TO-252
D-PAK _{Bottom View}
Features
V_DS (V) = 25V
I_D = 50A (VGS = 10V)
R_DS(ON) <6 mΩ (V_GS = 10V)
R_DS(ON) <10 mΩ (VGS = 4.5V)
100% UIS Tes1te9d3!
100% Rg Teste1d8!
D
S
G
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
T_C=25°C
Current ^G
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^C
Repetitive avalanche energy L=0.1mH ^C
Power Dissipation ^B
Power Dissipation ^A
T_C=25°C
T_C=100°C
T_A=25°C
T_A=70°C
V_DS
V_GS
I_D
I_DM
I_AR
E_AR
P_D
P_DSM
Junction and Storage Temperature Range T_J, T_STG
G
S
Maximum
25
±20
50
40
150
30
45
50
25
3
2.1
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Case ^B
Symbol
Typ
t ≤ 10s
Steady-State
R_θJA
15
41
Steady-State
R_θJC
2.1
Max
20
50
3
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com