AOD444 Datasheet, PDF (1/6 Pages) List of Unclassifed Manufacturers – N-Channel Enhancement Mode Field Effect Transistor

AOD444/AOI444
60V N-Channel MOSFET
General Description
Product Summary
The AOD444/AOI444 combine advanced trench MOSFET
technology with a low resistance package to provide
extremely low R_DS(ON). Those devices are suitable for use
in PWM, load switching and general purpose applications.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
100% UIS Tested
100% Rg Tested
60V
12A
< 60mΩ
< 85mΩ
TopView
D
TO252
DPAK
Bottom View
D
TopView
TO-251A
IPAK
Bottom View
D
S
G
G
S
S
D
G
G
G
D
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
T_A=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
I_DSM
I_AS, I_AR
E_AS, E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
60
±20
12
9
30
4
3
19
18
20
10
2.1
1.3
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Typ
17.4
50
4
Max
30
60
7.5
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: Aug 2009
www.aosmd.com
Page 1 of 6