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AOD425_11 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor
AOD425
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD425 uses advanced trench technology to
provide excellent RDS(ON) and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use
as a load switch or in PWM applications. The device is
ESD protected.
-RoHS Compliant
-Halogen Free*
Features
VDS (V) = -30V
ID = -50A (VGS = -10V)
RDS(ON) < 17mΩ (VGS = -10V)
RDS(ON) < 35mΩ (VGS = -5V)
ESD Protected!
100% Rg Tested!
Top View
TO252
DPAK
Bottom View
D
D
D
G
S
G
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
VDS
-30
Gate-Source Voltage
VGS
±25
Continuous Drain TC=25°C
-50
Current F
TC=100°C
ID
-36
Pulsed Drain Current C
IDM
-70
Continuous Drain TA=25°C
Current
TA=70°C
IDSM
-9
-7
TC=25°C
Power Dissipation B TC=100°C
PD
71
36
TA=25°C
Power Dissipation A TA=70°C
PDSM
2.5
1.6
Junction and Storage Temperature Range TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
Symbol
Typ
t ≤ 10s
Steady-State
RθJA
16
41
Steady-State
RθJC
1.7
Max
20
50
2.1
Units
V
V
A
A
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com