AOD425 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AOD425
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD425 uses advanced trench technology to
provide excellent R_DS(ON) and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use as a
load switch or in PWM applications. The device is ESD
protected.
-RoHS Compliant
-Halogen Free*
Features
V_DS (V) = -30V
I_D = -20A (V_GS = -10V)
R_DS(ON) < 17mΩ (V_GS = -10V)
R_DS(ON) < 35mΩ (V_GS = -5V)
ESD Protected!
100% Rg Tested!
TO-252
Top View
D-PAK
Bottom View
D
D
G
S
G
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
T_C=25°C
Current ^F
T_C=100°C
Pulsed Drain Current ^C
Continuous Drain ^TA^=25°C
Current
T_A=70°C
Power Dissipation ^B
T_C=25°C
T_C=100°C
Power Dissipation ^A
T_A=25°C
T_A=70°C
Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_DSM
P_D
P_DSM
T_J, T_STG
Maximum
-30
±25
-40
-30
-70
-9
-7
50
25
2.3
1.5
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Case ^B
Symbol
Typ
t ≤ 10s
Steady-State
R_θJA
18
44
Steady-State
R_θJC
2.4
S
Max
22
55
3
Units
V
V
A
A
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com