AOD4191L Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AOD4191L
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD4191 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and low gate
resistance. The device well suited for high current
applications.
-RoHS Compliant
-Halogen Free*
Features
V_DS (V) = -40V
I_D = -34A
R_DS(ON) < 25mΩ
R_DS(ON) < 34mΩ
(V_GS = -10V)
(V_GS = -10V)
(V_GS = -4.5V)
100% UIS Tested!
100% R _g Tested!
TO-252
Top View ^{D-PAK Bottom View}
D
D
G
S
S
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TC^=25°C
Current ^B
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain ^TC^=25°C
Current ^A
T_C=100°C
I_D
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
G
S
Maximum
-40
±20
-34
-24
-70
-7
-6
-31
48
50
25
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Case ^B
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Typ
16.7
40
2.5
Max
25
50
3
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com