AOD419 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AOD419
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD419 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications. Standard Product
AOD419 is Pb-free (meets ROHS & Sony 259
specifications). AOD419L is a Green Product
ordering option. AOD419 and AOD419L are
electrically identical.
TO-252
D-PAK
Top View
Drain Connected
to Tab
GD S
Features
V_DS (V) = -40V
I_D = -20A
(V_GS = -10V)
R_DS(ON) < 40mΩ (V_GS = -10V)
R_DS(ON) < 65mΩ (V_GS = -4.5V)
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_A=25°C ^G
Current ^B,G
T_A=100°C
I_D
Pulsed Drain Current
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.3mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
-40
±20
-20
-18
-60
-20
60
50
25
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
16.7
40
25
50
Maximum Junction-to-Case ^C
Steady-State
R_θJL
2.5
3
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W