AOD4187 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AOD4187
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD4187 uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate charge.
With the excellent thermal resistance of the DPAK
package, this device is well suited for high current load
applications
V_DS (V) = -40V
I_D = -45A
R_DS(ON) < 17mΩ
R_DS(ON) < 23mΩ
(V_GS = -10V)
(V_GS = -10V)
(V_GS = -4.5V)
-RoHS Compliant
-Halogen Free*
100% UIS Tested!
100% Rg Tested!
TO-252
Top View ^{D-PAK Bottom View}
D
D
G
S
S
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TC^=25°C
Current ^G
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
T_C=25°C
Current
T_C=100°C
I_DSM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
G
Maximum
-40
±20
-45
-30
-100
-9
-7
-36
65
60
30
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
t ≤ 10s
Steady-State
R_θJA
15
41
Maximum Junction-to-Case
Steady-State
R_θJC
2
S
Max
20
50
2.5
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com