AOD4186 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOD4186
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD4186 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R_DS(ON). This device is ideal for low
voltage inverter applications.
V_DS (V) =40V
I_D = 50A
R_DS(ON) < 15mΩ
R_DS(ON) < 19mΩ
(V_GS = 10V)
(V_GS = 10V)
(V_GS = 4.5V)
- RoHS Compliant
- Halogen Free
Top View
D
TO-252
D-PAK _{Bottom View}
100% UIS Tested!
100% R _g Tested!
D
G
S
S
G
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
V_DS
40
Gate-Source Voltage
V_GS
±20
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
35
27
Pulsed Drain Current ^C
I_DM
70
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
10
8
Avalanche Current ^C
I_AR
24
Repetitive avalanche energy L=0.1mH ^C
E_AR
29
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
50
25
T_A=25°C
Power Dissipation ^A T_A=70°C
Junction and Storage Temperature Range
P_DSM
T_J, T_STG
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
t ≤ 10s
Steady-State
R_θJA
16.7
40
25
50
Maximum Junction-to-Case
Steady-State
R_θJC
2.5
3
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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