AOD4180 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – 80V N-Channel MOSFET

AOD4180
80V N-Channel MOSFET
SDMOS ^TM
General Description
The AOD4180 is fabricated with SDMOS^TM trench
technology that combines excellent R_DS(ON) with low gate
charge and low Qrr.The result is outstanding efficiency
with controlled switching behavior. This universal
technology is well suited for PWM, load switching and
general purpose applications.
Product Summary
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 7V)
100% UIS Tested
100% R_g Tested
80V
54A
< 14mΩ
< 18mΩ
TO252
DPAK
D
Top View
Bottom View
D
D
S
G
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
T_A=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
I_DSM
I_AS, I_AR
E_AS, E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
G
S
Maximum
80
±25
54
42
160
10
8
45
100
150
75
3.1
2
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
12
33
Maximum Junction-to-Case
Steady-State
R_θJC
0.8
Max
15
40
1
Rev0: May 2010
www.aosmd.com
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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