AOD418 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 30V N-Channel MOSFET

AOD418/AOI418
30V N-Channel MOSFET
General Description
Product Summary
The AOD418/AOI418 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and low gate
resistance. With the excellent thermal resistance of the
DPAK/IPAK package, this device is well suited for high
current load applications.
V_DS
I_D (at V_GS= 10V)
R_DS(ON) (at V_GS= 10V)
R_DS(ON) (at V_GS = 4.5V)
100% UIS Tested
100% R_g Tested
30V
36A
< 7.5mΩ
< 11mΩ
Top View
TO252
DPAK
Bottom View
D
D
Top View
TO251A
IPAK
Bottom View
S
G
G
S
S
D
G
G
G
D
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
T_A=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
I_DSM
I_AS, I_AR
E_AS, E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
30
±20
36
28
125
13.5
10.5
27
36
50
25
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
16
41
Maximum Junction-to-Case
Steady-State
R_θJC
2.5
Max
20
50
3
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: February 2011
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