AOD4144 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – N-Channel SDMOSTM Power Transistor

AOD4144
N-Channel SDMOS^TM Power Transistor
General Description
Features
The AOD4144 is fabricated with SDMOS^TM trench
technology that combines excellent R_DS(ON) with low gate
charge.The result is outstanding efficiency with
controlled switching behavior. This universal technology
is well suited for PWM, load switching and general
purpose applications.
V_DS (V) =30V
I_D = 55A
R_DS(ON) < 8mΩ
R_DS(ON) < 14mΩ
(V_GS = 10V)
(V_GS = 10V)
(V_GS = 4.5V)
- RoHS Compliant
- Halogen Free
100% UIS Tested!
100% R _g Tested!
TO-252
Top View ^{D-PAK Bottom View}
D
D
G
S
S
G
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±20
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
55
43
Pulsed Drain Current ^C
I_DM
110
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
13
10
Avalanche Current ^C
I_AR
30
Repetitive avalanche energy L=0.1mH ^C
E_AR
45
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
50
25
T_A=25°C
Power Dissipation ^A T_A=70°C
Junction and Storage Temperature Range
P_DSM
T_J, T_STG
2.3
1.4
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
t ≤ 10s
Steady-State
R_θJA
18
44
22
55
Maximum Junction-to-Case
Steady-State
R_θJC
2.4
3
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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