AOD4140 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – N-Channel SDMOSTM POWER Transistor

AOD4140
N-Channel SDMOS^TM POWER Transistor
General Description
Features
The AOD4140 is fabricated with SDMOS^TM trench
technology that combines excellent R_DS(ON) with low
gate charge.The result is outstanding efficiency with
controlled switching behavior. This universal technology
is well suited for PWM, load switching and general
purpose applications.
-RoHS Compliant
-Halogen Free*
V_DS (V) = 25V
I_D = 43A
R_DS(ON) <7mΩ
R_DS(ON) <14mΩ
(V_GS = 10V)
(V_GS = 10V)
(V_GS = 4.5V)
100% UIS Tested!
100% Rg Tested!
TO-252
Top View ^{D-PAK Bottom View}
D
D
G
S
S
G
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TC^=25°C
Current^G
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Pulsed Forward Diode Current^C
I_SM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=50uH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
25
±20
43
34
120
120
35
61
50
25
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Case ^B
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Typ
14.2
39
2.5
Max
20
50
3
Units
V
V
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com